Induction Furnace SICG8-SL07D

Our Products

■ 石英管双线圈感应晶体生长炉

  • 坩埚区域温度分离
  • 方便原工艺过渡
  • 水平螺旋线圈,提高磁场平衡与双线圈匹配

金属壳双线圈感应晶体生长炉

  • 炉下放下出料,解决8英寸坩埚上取料的不便
  • 出料时,坩埚与热场自动分离,提高炉次的重复性
  • 独特的二次发热体
  • 优化内置线圈绝缘
  • 横向多点测温
  • 提高炉采用特殊定制石墨硬毡

Our Innovation

Double Coils Technology

/Double Coll/

We control two coils separately ,one coil controls the temperature of the SiC powder material area and the other one control the temperature of the seed crystal area. The axial temperature gradient during crystal growth can be better controlled. After crystal growth is finished,we can control the temperature of the seed crystal area to do crystal annealing separately.

Axial and Radial Temp Control Separate

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[Axial and Radial Separation] is adopted by graphite furnace to solve the temperature coupling phenomenon of induction furnace. Adjust the axial temperature gradient to increase the crystal growth rate, but the radial temperature gradient will also be changed, which will lead to the change of the crystal growth surface, to increase of stress and crystal defects.
The graphite furnace heats up by different heating elements, it can separate control temp around the seed area and SiC particles material area .Then we can improve the growth rate when ensuring the crystal quality

Temp Control at Whole Cycle

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This technology solves the problem of accurate temperature measurement and control in the high-temperature environment above 2000 ° C.Normally we use infrared Thermometers . However, in the high-temperature environment, volatiles from graphite crucible and SiC particles materials will affect infrared thermometers data, so normally we control the power to estimate the temperature
We separate the crystal grow space and temperature measurement space .So we can control the real temperature when crystal growing,Impove the quality and stable of crystal

High Precision Pressure Control

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Pressure control is important for crystal growth. The pressure will affect the gas composition, gas flow uniformity, and crystal growth rate of SiC powder during sublimation.
The common pressure control accuracy is around ± 3Pa. We use our innovation pressure sensor match with a proportional valve to control pressure accuracy ± 0.3Pa (100-500Pa).

New Process

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[One-step transfer] The process adopts a new crucible design of a porous graphite cylinder. The SiC material particles were placed between the crucible wall and the porous graphite cylinder. The whole crucible is deeper and bigger compared with the regular crucible. So we can put more materials and the evaporation area is bigger. This process solves the problem of crystal defects caused by the recrystallization of materials. The new process reduces the sensitivity of the temperature distribution in the material area to crystal growth, improves and stabilizes the transfer efficiency, and reduces the impact of carbon inclusions in the late growth period. [One-step transfer] without sticking seed crystal can be used to free thermal expansion, which is conducive to stress release. [One-step transfer] The process optimizes the hot zone and improves the efficiency of expanding.

*new process means [One-step transfer]

Heat Radiation Control

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We put an auto-run insulation shield above the graphite crucible. Then we can control the heat radiation by rotating the insulation shield.
The crystal growth interface moves downward during crystal growth, We can control the heat radiation to adjust the temperature of the seed crystal area without moving the Coil. Close the heat radiation when the crystal growth is completed to improve the quality of the SIC crystal.

Automive Control

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Design for Industry 4.0 factory

  1. Auto-run to load and unload the goods.
  2. Auto-run to level and position by itself.
  3. AGV+Charging system
  4. Laser navigation available.

*will launch soon

Materials

TaC Coating/Tantalum carbide coating

SiC Coating/Silicon carbide coating

Graphite/Porous Graphite

Tools/Insulation felt and other tools

在碳化硅8英寸时代到来之际,随着坩埚的直径增长,感应线圈只能加热坩埚的表面,不同位置的径向温度梯度都会随之增大,而这样的参数变化不适合大直径的晶体生长。为了对应行业客户的使用惯性及Know-How的延续,恒普科技解决了双线圈对石墨坩埚的温度上下无法分离,做到了【准轴径分离】,并将技术同时使用在了两种炉型上,满足更多客户的使用习惯。

感应炉 SICG8-SL07D
  • 长晶方式PVT
  • 加热平台感应加热
  • 长晶速度0.2-0.3mm/h
  • 长晶尺寸6 inch/8 inch
  • 长晶高度30-40mm
  • 线圈类型单/双线圈