HIPER Technology can provide special TaC coatings for various components and carriers. Through HIPER's industry-leading coating process, the TaC coating can obtain high purity, high temperature stability and high chemical resistance, thereby improving the product quality of crystal (SiC/GaN) and EPI layers, and extending the lifetime of critical reactor components.

HIPER has launched a new generation of SiC crystal growth thermal field material - porous tantalum carbide, which is mainly used for gas phase component filtration, adjusting local temperature gradients, guiding the direction of material flow, and controlling leakage. It can be combined with another solid tantalum carbide (dense) or tantalum carbide coating of Hengpu Technology to form components with locally different conductances.

The advanced graphite products produced by HIPER are mainly used in semiconductor and other fields. Our in-depth knowledge of advanced materials and specialized engineering enables us to develop products of extreme purity and excellent porosity while maintaining excellent insulating properties. The high-standard porous graphite we provide can improve efficiency and increase production. In a series of applications, our products are mainly used in the new process of crystal growth [primary mass transfer]. We are also willing to continue to help manufacturers aim to achieve higher performance and reliability in their product development

Used for conductive single crystal growth, 8-40 mesh/mesh particle size is precisely controllable, and the purity is not less than 99.9995% Purity: refers to the use of GDMS full element detection (excluding N elements), using 100% to subtract the measured element content Value, where the elements less than the detection limit are counted according to the concentration of 0%