Horizontal CVD equipment
The epitaxial process is a very critical process link in the SIC industry chain. Since the devices are basically implemented on the epitaxial, the quality of the epitaxial has a great impact on the performance of the device, but the quality of the epitaxial is also affected by the crystal and substrate processing. Being in the middle core link of an industry plays a very critical role in the development of the industry. The epitaxial furnace of Hengpu Technology uses the CVD method for SIC homogeneous epitaxial growth, and produces cold-walled horizontal epitaxial furnaces and cold-walled vertical epitaxial furnaces at the same time. It adopts innovative methods to meet the industry's epitaxial thickness and uniform doping requirements. need.
Our Products
■ Horizontal
- Resistive heating
- 6 inches
- Monolithic
Our Innovation
Axial and Radial Temp Control Separate
Note: A single furnace type does not necessarily involve all technologies, it is for reference only, please call HIPER for details
[Axis-diameter separation] The technology is applied to the resistive crystal growth furnace to completely solve the temperature coupling phenomenon in the direction of the shaft-diameter. Adjust the axial temperature gradient to increase the crystal growth rate, and the radial temperature gradient will also change accordingly, resulting in unevenness of the crystal growth interface, increased stress, and increased crystal defects. The resistance type crystal growth furnace can control the temperature of the seed crystal area and the source material area separately through the resistance heating in different areas, and achieve the separation of the axial temperature gradient and the radial temperature gradient, thereby stabilizing the crystal growth surface shape and greatly improving the crystal growth rate. Growth rate.
Materials
MATERIALS
HIPER provides customers with a one-stop solution for growing crystal materials
TaC Coating
SiC Coating
Porous Graphite
Tools
Contact Us
China/Overseas Business Department: David Zou
Mobile: 13567416699
E-mail: xiangwei.zou@hiper.cn
In case of any problem, HIPER welcomes your call!
The epitaxial process is a very critical process link in the SIC industry chain. Since the devices are basically implemented on the epitaxial, the quality of the epitaxial has a great impact on the performance of the device, but the quality of the epitaxial is also affected by the crystal and substrate processing. Being in the middle core link of an industry plays a very critical role in the development of the industry. The epitaxial furnace of Hengpu Technology uses the CVD method for SIC homogeneous epitaxial growth, and produces cold-walled horizontal epitaxial furnaces and cold-walled vertical epitaxial furnaces at the same time. It adopts innovative methods to meet the industry's epitaxial thickness and uniform doping requirements. need.